io = 200 ma v r = 30 vo lt s CDBU0230 features designed for mounting on small surface. extremely thin/leadless package. low drop-down voltage. majority carrier conduction. mechanical data case: 0603 (1608) standard package , molded plastic. t erminals: gold plated, solderable per mil-std-750, method 2026. polarity: indicated by cathode band. mounting position: any. weight: 0.003 gram (approximately). smd schottky barrier diode smd schottky barrier diode unit v ua pf parameter forward voltage reverse currentcapacitance between terminals conditions i f = 200 ma dc v r = 30 v f = 1mhz, and 10 vdc reverse voltage symbol v f i r c t min typ 9 max 0.50 30 www.com chip.co m.tw c o m c h ip c o m c h ip parameter repetitive peak reverse voltage reverse voltageaverage forward current forward current , surge peak power dissipation storage temperaturejunction temperature conditions symbol v rrm v r io i fsm p d t stg t j min -40 -40 max 35 30 200 150 +125+125 typ 2000 unit v v ma ma mw c c maximum rating ( at t a = 25 c unless otherwise noted ) electrical characteristics ( at t a = 25 c unless otherwise noted ) 8.3 ms single half sine-wave superimposed on rate load ( jedec method ) rds0301008-b 0.0 71( 1.8 0) 0.0 63( 1.6 0) 0.0 10( 0.2 5) ty p. 0.0 39( 1.0 0) 0.0 31( 0.8 0) 0.0 33 ( 0.8 5) 0.0 27 ( 0.7 0) dim en sio ns in in ch es an d ( mi llim ete r) 06 03 (1 60 8) 0.0 12 ( 0.3 0) ty p. 0.0 14( 0.3 5) ty p. (lead-free device)
rating and characteristic cur ves (CDBU0230) f o r w a r d c u r r e n t ( m a ) fig. 1 - forw ard cha racte ristic s for war d vol tag e (v) reverse voltage (v) fig. 2 - rev erse ch aract eristi cs r e v e r s e c u r r e n t ( a ) fig. 4 - curre nt d erating curve 0 20 40 60 80 10 0 0 25 50 75 100 125 150 mounting on glass epoxy pcbs a v e r a g e f o r w a r d c u r r e n t ( % ) www.com chip.co m.tw c o m c h ip c o m c h ip fig. 3 - cap acita nce bet ween te rmina ls chara cteris tics rev ers e vol tag e (v) c a p a c i t a n c e b e t w e e n t e r m i n a l s ( p f ) 1 10 100 smd schottky barrier diode smd schottky barrier diode 30 0 5 10 15 20 25 35 0 10 2 0 3 0 40 10 u 1m 1n 1u 10 0u ambient temperature ( c ) f = 1 mhz ta = 25 c rds0301008-b 10 m 10 0n 10 n -25 c 75 c 25 c 125 c 0.1 0.2 0.4 0.7 0 0.5 0.3 10 00 0.0 01 10 1 00 0.6 1 0.1 0.0 1 7 5 c - 2 5 c 1 2 5 c 2 5 c
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